RA08N1317M compliance equivalent, rohs compliance.
* Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=9.6V, VGG=0V)
* Pout>8W @ VDD=9.6V, VGG=3.5V, Pin=20mW
* ηT>50% @ Pout=8W (VGG control), VDD=9.6V, Pin=20mW.
The RA08N1317M is a 8-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG.
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