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RA30H1721M - RoHS Compliance

General Description

The RA30H1721M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 175- to 215-MHz range.

The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors.

Key Features

  • Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V).
  • Pout>30W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW.
  • Broadband Frequency Range: 175-215MHz.
  • Low-Power Control Current IGG=1mA (typ) at VGG=5V www. DataSheet4U. com.
  • Module Size: 66 x 21 x 9.88 mm.
  • Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power 1 4 5 1 2 3 4 5 RF Input (Pin) Gate Voltag.

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Full PDF Text Transcription for RA30H1721M (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for RA30H1721M. For precise diagrams, and layout, please refer to the original PDF.

MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H1721M BLOCK DIAGRAM 2 3 RoHS Compliance , 175-215MHz 30W 12.5V, 2 Stage Amp. ...

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LOCK DIAGRAM 2 3 RoHS Compliance , 175-215MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H1721M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 175- to 215-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially.

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