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RA45H7687M1 - RoHS Compliance

General Description

The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 764- to 870-MHz range.

The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors.

Key Features

  • Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.8V, VGG=0V) www. DataSheet4U. com 1 4 5 1 2 3 4 5 RF Input added Gate Voltage 1(Pin&VGG1) Gate Voltage 2(VGG2), Power Control Drain Voltage (VDD), Battery RF Output (Pout) RF Ground (Case).
  • Pout>45W, ηT>33% @VDD=12.8V, VGG1=3.4V, VGG2=5V, Pin=50mW.
  • Broadband Frequency Range: 764-870MHz.
  • Metal cap structure that makes the improvements of RF radiation simple.
  • Low-Power Control Current IGG1+IGG2=0.

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Full PDF Text Transcription for RA45H7687M1 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for RA45H7687M1. For precise diagrams, and layout, please refer to the original PDF.

MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H7687M1 BLOCK DIAGRAM 2 3 RoHS Compliance, 764-870MHz 45W 12.8V, 2 Stage Amp. ...

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BLOCK DIAGRAM 2 3 RoHS Compliance, 764-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 764- to 870-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage 1 and the gate voltage 2(VGG1=VGG2=0V), only a small leakage current flows into the drain and the nominal output signal (Pout=45W) attenuates up to 60 dB. When fixed i.e. 3.4V, is supplied to the gate voltage 1, the output power and the drain current increase as the gate voltage 2 in

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