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RA45H7687M1 Datasheet, Mitsubishi Electric

RA45H7687M1 Datasheet, Mitsubishi Electric

RA45H7687M1

datasheet Download (Size : 194.53KB)

RA45H7687M1 Datasheet

RA45H7687M1 compliance equivalent, rohs compliance.

RA45H7687M1

datasheet Download (Size : 194.53KB)

RA45H7687M1 Datasheet

Features and benefits


* Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.8V, VGG=0V) www.DataSheet4U.com 1 4 5 1 2 3 4 5 RF Input added Gate Voltage 1(Pin&VGG1) Gate Voltage 2(VGG2.

Description

The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 764- to 870-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage 1 a.

Image gallery

RA45H7687M1 Page 1 RA45H7687M1 Page 2 RA45H7687M1 Page 3

TAGS

RA45H7687M1
RoHS
Compliance
Mitsubishi Electric

Manufacturer


Mitsubishi Electric

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