RA60H1317M Mitsubishi Electric Datasheet

RA60H1317M Key Features

• Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)
• Pout>60W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 135-175MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 66 x 21 x 9.88 mm
• Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output pow
• packed without desiccator)
• Frequency Range Output Power Total Efficiency 2