RA60H1317M - Silicon RF Power Modules

Mitsubishi Electric

The RA60H1317M by Mitsubishi Electric is a Silicon RF Power Modules. Below is the official datasheet preview.

Datasheet Details

Part number	RA60H1317M
Manufacturer	Mitsubishi Electric
File Size	234.39 KB
Description	Silicon RF Power Modules
Datasheet	RA60H1317M_MitsubishiElectric.pdf
Additional preview pages of the RA60H1317M datasheet.

The RA60H1317M is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to 175-MHz range.

Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V).
Pout>60W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW.
Broadband Frequency Range: 135-175MHz.
Low-Power Control Current IGG=1mA (typ) at VGG=5V.
Module Size: 66 x 21 x 9.88 mm.
Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power 2 3 1 4 5 1 2 3 4 5 RF Input (Pin) Gate Voltage (VGG), Power.

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Published: Feb 16, 2007 |