RA60H1317M Datasheet - Mitsubishi Electric

Silicon RF Power Modules

RA60H1317M Features

* Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)

* Pout>60W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW

* Broadband Frequency Range: 135-175MHz

* Low-Power Control Current IGG=1mA (typ) at VGG=5V

* Module Size: 66 x 21 x 9.88 mm

* Linear ope

RA60H1317M General Description

The RA60H1317M is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the .

RA60H1317M Datasheet (234.39 KB)

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Part number:

RA60H1317M

Manufacturer:

Mitsubishi Electric

File Size:

234.39 KB

Description:

Silicon rf power modules.
www.DataSheet4U.com MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H1317M 135-175MHz 60W 12.5V MOBILE R.

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RA60H1317M Silicon Power Modules Mitsubishi Electric

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RA60H1317M Features

RA60H1317M General Description

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