Datasheet Summary
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
0.2+/-0.05
(0.22)
Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION
RD07MVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications. OUTLINE DRAWING
6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05
4.9+/-0.15 1.0+/-0.05
- High power gain: Pout>7W, Gp>10dB@Vdd=7.2V,f=520MHz
- High Efficiency: 60%typ. (175MHz)
- High Efficiency: 55%typ. (520MHz)
APPLICATION
For output stage of high power amplifiers in VHF/UHF band mobile radio sets.
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