RD07MVS1B Overview
Description
RD07MVS1B is a MOS FET type transistor specifically designed for VHF/UHF RF power 4.9+/-0.15 1.0+/-0.05 6.0+/-0.15 0.2+/-0.05 amplifiers applications. RD07MVS1B improved a drain surge than RD07MVS1 by optimizing MOSFET structure.
Key Features
- (175MHz) High Efficiency: 55%typ
- (output) (GND) (input) Note ( ):center value UNIT:mm
