RD07MVS1B - Silicon RF Power MOSFET

Product Overview

Mitsubishi Electric Semiconductor

Datasheet Details

Part number	RD07MVS1B
Manufacturer	Mitsubishi Electric Semiconductor
File Size	299.83 KB
Description	Silicon RF Power MOSFET
Datasheet	RD07MVS1B Datasheet
Additional preview pages of the RD07MVS1B datasheet.

Product details

Description

RD07MVS1B is a MOS FET type transistor specifically designed for VHF/UHF RF power 4.9+/-0.15 1.0+/-0.05 6.0+/-0.15 0.2+/-0.05 amplifiers applications.RD07MVS1B improved a drain surge than RD07MVS1 by optimizing MOSFET structure.1 2 3.5+/-0.05 Datasheet pdf - http://www.DataSheet4U.co.kr/ 3 INDEX MARK (Gate) (0.22) (0.25) (0.25)

Features

Pout>7W, Gp>10dB @Vdd=7.2V,f=520MHz High Efficiency: 60%typ. (175MHz) High Efficiency: 55%typ. (520MHz) www. DataSheet. net/ 0.2+/-0.05 0.9+/-0.1 High power gain: Terminal No. 1.Drain (output) 2.Source (GND) 3.Gate (input) Note ( ):center value UNIT:mm.

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Published: Nov 5, 2012 |