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RD07MVS1B - Silicon RF Power MOSFET

Product Overview

Mitsubishi Electric Semiconductor

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RD07MVS1B Silicon RF Power MOSFET by Mitsubishi Electric Semiconductor - Datasheet Preview — Datasheet preview – RD07MVS1B

Datasheet Details

Part number	RD07MVS1B
Manufacturer	Mitsubishi Electric Semiconductor
File Size	299.83 KB
Description	Silicon RF Power MOSFET
Datasheet	RD07MVS1B Datasheet
Additional preview pages of the RD07MVS1B datasheet.

RD07MVS1B Product details

Description

amplifiers applications.

RD07MVS1B improved a drain surge than RD07MVS1 by optimizing MOSFET structure.

Features

Pout>7W, Gp>10dB @Vdd=7.2V,f=520MHz High Efficiency: 60%typ. (175MHz) High Efficiency: 55%typ. (520MHz) www. DataSheet. net/ 0.2+/-0.05 0.9+/-0.1 High power gain: Terminal No. 1.Drain (output) 2.Source (GND) 3.Gate (input) Note ( ):center value UNIT:mm.

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Published: Nov 5, 2012 |