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RD07MUS2B Datasheet Silicon Rf Power MOSFET

Manufacturer: Mitsubishi Electric

Overview: < Silicon RF Power MOS FET (Discrete) > RD07MUS2B RoHS pliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W OUTLINE DRAWING 6.0+/-0.15 0.2+/-0.05 (0.

General Description

RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications.

4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 1 4.9+/-0.15 1.0+/-0.05 2

Key Features

  • High power gain and High Efficiency. Typical Po Gp ηD (175MHz) 7.2W 13.8dB 65% (527MHz) 8W 13.0dB 63% (870MHz) 7W 11.5dB 58% Integrated gate protection diode. 3 (0.25) (0.25) INDEX MARK (Gate) 0.2+/-0.05 0.9+/-0.1 Terminal No. 1.Drain (output) 2.Source (GND) 3.Gate (input) Note ( ):center value UNIT:mm.

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RD07MUS2B Distributor