Datasheet4U.com

RD07MUS2B - Silicon RF Power MOSFET

Product Overview

Mitsubishi Electric Semiconductor

📥 Download Datasheet

RD07MUS2B Silicon RF Power MOSFET by Mitsubishi Electric Semiconductor - Datasheet Preview — Datasheet preview – RD07MUS2B

Datasheet Details

Part number	RD07MUS2B
Manufacturer	Mitsubishi Electric Semiconductor
File Size	689.20 KB
Description	Silicon RF Power MOSFET
Datasheet	RD07MUS2B Datasheet
Additional preview pages of the RD07MUS2B datasheet.

Product details

Description

RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications.

Features

High power gain and High Efficiency. Typical Po Gp ηD (175MHz) 7.2W 13.8dB 65% (527MHz) 8W 13.0dB 63% (870MHz) 7W 11.5dB 58% Integrated gate protection diode. 3 (0.25) (0.25) INDEX MARK (Gate) 0.2+/-0.05 0.9+/-0.1 Terminal No. 1.Drain (output) 2.Source (GND) 3.Gate (input) Note ( ):center value UNIT:mm.

📁 Similar Datasheet

RD07MVS1 - Silicon MOSFET Power Transistor (Mitsubishi Electric)
RD00HHS1 - RoHS Compliance (Mitsubishi Electric)
RD00HVS1 - RoHS Compliance (Mitsubishi Electric)
RD0106T - High-Speed Switching Diode (Sanyo Semicon Device)
RD01MUS1 - Silicon RF Power MOS FET (Mitsubishi Electric)
RD01MUS2 - Silicon MOSFET Power Transistor (Mitsubishi Electric)
RD02LUS2 - Silicon RF Power MOS FET (Mitsubishi)
RD02MUS1 - Silicon MOSFET Power Transistor (Mitsubishi Electric)

Other Datasheets by Mitsubishi Electric Semiconductor

RD07MVS1B - Silicon RF Power MOSFET
RD07MVS2 - Silicon MOSFET Power Transistor
RD01MUS2B - Silicon MOSFET Power Transistor
RD02MUS1B - Silicon MOSFET Power Transistor
RD04HMS2 - Silicon MOSFET Power Transistor
RD06HVF1 - MOS FET type transistor specifically designed for VHF RF power amplifiers applications

Published: Nov 5, 2012 |