RD07MVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.
High power gain: Pout>7W, Gp>10dB@Vdd=7.2V,f=520MHzHigh Efficiency: 60%typ.
| Part number | RD07MVS1 |
|---|---|
| Manufacturer | Mitsubishi Electric |
| File Size | 245.00 KB |
| Description | Silicon MOSFET Power Transistor |
| Datasheet |
 RD07MVS1 Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| RD07MVS1B | Silicon RF Power MOSFET | Mitsubishi Electric Semiconductor |
| RD07MVS2 | Silicon MOSFET Power Transistor | Mitsubishi Electric Semiconductor |
| RD07MUS2B | Silicon RF Power MOSFET | Mitsubishi Electric Semiconductor |
| RD0106T | High-Speed Switching Diode | Sanyo Semicon Device |
| RD01MUS2B | Silicon MOSFET Power Transistor | Mitsubishi Electric Semiconductor |
| Part Number | Description |
|---|---|
| RD00HHS1 | RoHS Compliance |
| RD00HVS1 | RoHS Compliance |
| RD01MUS1 | Silicon RF Power MOS FET |
| RD01MUS2 | Silicon MOSFET Power Transistor |
| RD02MUS1 | Silicon MOSFET Power Transistor |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
