RD07MVS1 Overview
RD07MVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications. OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 1 4.9+/-0.15 1.0+/-0.05 High power gain: Pout>7W, Gp>10dB@Vdd=7.2V,f=520MHz High Efficiency:.
RD07MVS1 Key Features
- 1:The material of the PCB Glass epoxy (t=0.6 mm)