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RD07MVS1

Manufacturer: Mitsubishi Electric

RD07MVS1 datasheet by Mitsubishi Electric.

RD07MVS1 datasheet preview

RD07MVS1 Datasheet Details

Part number RD07MVS1
Datasheet RD07MVS1_MitsubishiElectric.pdf
File Size 245.00 KB
Manufacturer Mitsubishi Electric
Description Silicon MOSFET Power Transistor
RD07MVS1 page 2 RD07MVS1 page 3

RD07MVS1 Overview

RD07MVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications. OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 1 4.9+/-0.15 1.0+/-0.05 High power gain: Pout>7W, Gp>10dB@Vdd=7.2V,f=520MHz High Efficiency:.

RD07MVS1 Key Features

  • 1:The material of the PCB Glass epoxy (t=0.6 mm)

RD07MVS1B from other manufacturers

View RD07MVS1B datasheet index

Brand Logo Part Number Description Other Manufacturers
Mitsubishi Electric Semiconductor Logo RD07MVS1B Silicon RF Power MOSFET Mitsubishi Electric Semiconductor
Mitsubishi Electric logo - Manufacturer

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