RD07MVS2 Description
OUTLINE DRAWING RD07MVS2 is a MOS FET type transistor specifically designed for VHF/UHF RF po -wer amplifiers applications. 6.0+/-0.15 This device have an interal monolithic zener diode from gate to source for ESD protection. 4.9+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 1 1.0+/-0.05.
RD07MVS2 Key Features
- High power gain: Pout>7W, Gp>10dB @Vdd=7.2V,f=520MHz -High Efficiency: 60%typ. (175MHz) -High Efficiency: 55%typ. (520MH
RD07MVS2 Applications
- High power gain: Pout>7W, Gp>10dB @Vdd=7.2V,f=520MHz -High Efficiency: 60%typ. (175MHz) -High Efficiency: 55%typ. (520MHz) -Integrated gate protection diode