RD07MVS2 Overview
Description
OUTLINE DRAWING RD07MVS2 is a MOS FET type transistor specifically designed for VHF/UHF RF po -wer amplifiers applications. 6.0+/-0.15 This device have an interal monolithic zener diode from gate to source for ESD protection.
Key Features
- High Efficiency: 60%typ. (175MHz)
- High Efficiency: 55%typ. (520MHz)
- Integrated gate protection diode 3 (0.25) INDEX MARK (Gate)
