2SK2973 fet equivalent, rf power mos fet.
* High power gain:Gpe≥13dB @VDD=9.6V,f=450MHz,Pin=17dBm
* High efficiency:55% typ.
* Source case type SOT-89 package (connected internally to source)
1 2 3
.
OUTLINE DRAWING
4.6MAX 1.6±0.2
Dimensions in mm 1.5±0.1
FEATURES
* High power gain:Gpe≥13dB @VDD=9.6V,f=450MHz,.
Image gallery
Download