MOS Datasheet | Specifications & PDF Download

3.7A, 20V N 　N 　N-Channel Enhancement Mode Field Effect Transistor SMD 　　Features 　■20V, 3.7A, RDS(ON)=50mΩ @ VGS=4.5V 　■High dense cell design fo

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CHIPSET-IC.COM N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 20mΩ ID 12A G UIS,

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MS23P01S P-Channel Enhancement Mode Power MOSFET Description The MS23P01S uses advanced trench technology to provide excellent RDS(ON), low gate char

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4.8 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 AND NE5500179A GSM1900 TRANSMISSION AMPLIFIERS FEATURES • HIGH OUTPUT POWER: 29.5 dBm TYP at VDS

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Elektronische Bauelemente SBL20A60 60V, 20A Low VF Planar MOS Barrier Schottky Rectifiers RoHS Compliant Product A suffix of “-C” specifies halogen

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A09T http://www.osen.net.cn 30V N-CHANNEL MOSFET  Features：  Fast switching speed  High input impedance and low level drive  Improved dv/dt c

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Silan Microelectronics SVSP11N60D/F/S/FJD/T/KD2_Datasheet 11A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP11N60D/F/S/FJD/T/KD2 is an N

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HM2301B P-Channel Enhancement Mode Power MOSFET Description The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge

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WPM6207 Single P-Channel, -20V, -5.7A, Power MOSFET VDS (V) -20 Max Rds(on) (mΩ) 30@ VGS=–4.5V 40@ VGS=–2.5V 60@ VGS=–1.8V Descriptions The WPM620

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® LY62L1024 Rev. 1.2 128K X 8 BIT LOW POWER CMOS SRAM REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Description Initial Issue Revised Icc De

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AnaSem Analog Semiconductor IC VRH Series High speed, Low dropout, ±1% High output accuracy CMOS Voltage Regulator with On/Off circuit (IMPORTANT:

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http://www.ncepower.com Pb Free Product NCE4688 N and P-Channel Enhancement Mode Power MOSFET Description The NCE4688 uses advanced trench technolog

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SVF840T/F/D/S_Datasheet 8A, 500V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF840T/F/D/S is an N-channel enhancement mode power MOS field effect transist

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TOSHIBA TC551001BPL/BFL/BFTL/BTRL-70/85/10 SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM Description The TC551 001 BPL is a 1,048,576 bit CMOS

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Preliminary Technical Data Dual Low Power CMOS Analog Front End with DSP Microcomputer AD5744 FEATURES GENERAL DESCRIPTION Complete quad, 14-bit d

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www.DataSheet4U.com FQB5N60C / FQI5N60C FQB5N60C / FQI5N60C 600V N-Channel MOSFET QFET TM General Description These N-Channel enhancement mode pow

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3401 DESCRIPTION The 3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

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isc N-Channel MOSFET Transistor RJ1G08CGN FEATURES ·Drain Current –ID= 80A@ TC=25℃ ·Drain Source Voltage- : VDSS=40V(Min) ·Static Drain-Source On-Re

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HUFA76407P3 Data Sheet December 2001 12A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET® Power MOSFET Packaging JEDEC TO-220AB SOURCE DRAIN GATE F

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256K x 32 CMOS STATIC RAM MODULE Integrated Device Technology, Inc. IDT7MP4045 IDT7MP4145 FEATURES: • High density 1 megabyte static RAM module (IDT

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