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3362 Hits
J W W °C
MAXIMUM 6 50
UNIT °C / W
p.1
EMB20N03V
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIO...
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3128 Hits
● VDS = -20V,ID = -2.6A RDS(ON) < 160mΩ @ VGS=-2.5V RDS(ON) < 120mΩ @ VGS=-4.5V
D G
S Schematic diagram
● High power and current handing capability ...
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364 Hits
nuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this pr...
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252 Hits
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. op...
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205 Hits
The AOD452 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load...
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204 Hits
OL
TEST CONDITIONS
LIMITS MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage
V(BR)DSS VGS(th) IGSS
VGS =...
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202 Hits
l Fast Switching l Low ON Resistance(Rdson≤3.5mΩ) l Low Gate Charge (Typical Data:75nC) l Low Reverse transfer capacitances(Typical:800pF) l 100% Sin...
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189 Hits
z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Availabl...
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184 Hits
l Fast Switching l Low ON Resistance(Rdson≤4.5mΩType4mΩ) l High Power and Current Handing Capability l Low Reverse transfer Capacitances(Typical:480p...
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160 Hits
and Benefits
TO-220
Advanced MOSFET process technology Special designed for PWM, load switching and
general purpose applications Ultra low on-...
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157 Hits
pad of 2 oz copper.
UNIT V A
mJ W °C
UNIT °C / W
2012/3/9 p.1
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
...
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156 Hits
Low Power Loss by High Speed Switching and Low On-Resistance 100% Avalanche Tested Green Package – Pb Free Plating, Halogen Free
Applications...
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