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CM350DU-5F - IGBT Module

Description

Mitsubishi IGBT Modules are designed for use in switching applications.

Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode.

Features

  • ٗ Low Drive Power ٗ Low VCE(sat) ٗ Discrete Super-Fast Recovery Free-Wheel Diode ٗ High Frequency Operation ٗ Isolated Baseplate for Easy Heat Sinking.

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Datasheet preview – CM350DU-5F

Datasheet Details

Part number CM350DU-5F
Manufacturer Mitsubishi Electric Semiconductor
File Size 46.67 KB
Description IGBT Module
Datasheet download datasheet CM350DU-5F Datasheet
Additional preview pages of the CM350DU-5F datasheet.

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Full PDF Text Transcription

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MITSUBISHI IGBT MODULES CM350DU-5F HIGH POWER SWITCHING USE INSULATED TYPE A B TC Measured Point E K(4 - Mounting Holes) H D C F CM J H 3 - M6 NUTS R R G TAB #110, t = 0.5 M P M P M N L Q Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
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