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Mitsubishi Electric Semiconductor

FK7SM-12 Datasheet Preview

FK7SM-12 Datasheet

HIGH-SPEED SWITCHING USE

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FK7SM-12
MITSUBISHI Nch POWER MOSFET
FK7SM-12
HIGH-SPEED SWITCHING USE
OUTLINE DRAWING
15.9MAX.
r
φ 3.2
Dimensions in mm
4.5
1.5
2
1.0
q we
5.45
5.45
4.4
0.6 2.8
¡VDSS ................................................................................ 600V
¡rDS (ON) (MAX) .............................................................. 1.63
¡ID ............................................................................................ 7A
¡Integrated Fast Recovery Diode (MAX.) ........150ns
APPLICATION
Servo motor drive, Robot, UPS, Inverter Fluorecent
lamp, etc.
4
wr
q GATE
q
w DRAIN
e SOURCE
r DRAIN
e
TO-3P
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IS
ISM
PD
Tch
Tstg
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
VGS = 0V
VDS = 0V
Typical value
Conditions
Ratings
600
±30
7
21
7
21
125
–55 ~ +150
–55 ~ +150
4.8
Unit
V
V
A
A
A
A
W
°C
°C
g
Feb.1999




Mitsubishi Electric Semiconductor

FK7SM-12 Datasheet Preview

FK7SM-12 Datasheet

HIGH-SPEED SWITCHING USE

No Preview Available !

MITSUBISHI Nch POWER MOSFET
FK7SM-12
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
V (BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = 1mA, VGS = 0V
IG = ±100µA, VDS = 0V
VGS = ±25V, VDS = 0V
VDS = 600V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 3A, VGS = 10V
ID = 3A, VGS = 10V
ID = 3A, VDS = 10V
VDS = 25V, VGS = 0V, f = 1MHz
VDD = 200V, ID = 3A, VGS = 10V, RGEN = RGS = 50
IS = 3A, VGS = 0V
Channel to case
IS = 7A, dis/dt = –100A/µs
Limits
Unit
Min. Typ. Max.
600 —
—V
±30 —
—V
— — ±10 µA
——
1 mA
2 3 4V
1.25
1.63
3.75 4.89
V
3.3 5.5 — S
— 1100 — pF
— 125 — pF
— 17 — pF
— 30 — ns
— 30 — ns
— 100 — ns
— 35 — ns
— 1.5 2.0 V
— — 1.00 °C/W
— — 150 ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
200
160
120
80
40
0
0 50 100 150 200
CASE TEMPERATURE TC (°C)
MAXIMUM SAFE OPERATING AREA
5
3
2 tw=10µs
101
7
5
100µs
3
2 1ms
100
7
5
10ms
3
2 TC = 25°C
DC
Single Pulse
10–1
7
5
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999


Part Number FK7SM-12
Description HIGH-SPEED SWITCHING USE
Maker Mitsubishi Electric Semiconductor
Total Page 5 Pages
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