FU-423SLD-F3M31 Datasheet - Mitsubishi Electric Semiconductor

1.3 um LD MODULE

* High-speed response Emission wavelength is in 1.3mm band Low threshold current (7mA typ.) With photodiode for optical output monitor MQW

* active layer FSBH

* structure fabricated by all MOCVD process

* Multiple quantum well

* Facet selective-growth buried heterostructure APPLI

FU-423SLD-F3M31

Mitsubishi Electric Semiconductor

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1.3 um ld module.

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FU-423SLD-F3M31 1.3 MODULE Mitsubishi Electric Semiconductor

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