FU-427SLD-F1M54 Datasheet - Mitsubishi Electric Semiconductor

1.3 um LD MODULE

* High optical output power Emission wavelength is in 1.3mm band MQW

* active layer FSBH

* structure fabricated by all MOCVD process

* Multiple quantum well

* Facet selective-growth buried heterostructure APPLICATION OTDR ABSOLUTE MAXIMUM RATINGS (Tc=25° C) Parameter Symbol Lase

FU-427SLD-F1M54

Mitsubishi Electric Semiconductor

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1.3 um ld module.

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FU-427SLD-F1M54 1.3 MODULE Mitsubishi Electric Semiconductor

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