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Mitsubishi Electric Semiconductor

FX30SMJ-3 Datasheet Preview

FX30SMJ-3 Datasheet

Pch POWER MOSFET

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PRELIMINARYNSootimcee: pTahriasmisentroict alimfinitsalasrpeescuifbicjeactitotno. change.
FX30SMJ-3
MITSUBISHI Pch POWER MOSFET
FX30SMJ-3
HIGH-SPEED SWITCHING USE
OUTLINE DRAWING
15.9 max
4
φ 3.2
Dimensions in mm
4.5
1.5
2
1.0
1 23
5.45 5.45
G
0.6
4.4
2.8
4V DRIVE
VDSS ............................................................. –150V
rDS (ON) (MAX) .............................................. 100m
ID .................................................................... –30A
Integrated Fast Recovery Diode (TYP.) .........100ns
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
4
3
1 GATE
1 2 DRAIN
3 SOURCE
4 DRAIN
24
T0-3P
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
VGS = 0V
VDS = 0V
L = 30µH
Typical value
Conditions
Ratings
–150
±20
–30
–120
–30
–30
–120
150
–55 ~ +150
–55 ~ +150
4.8
Unit
V
V
A
A
A
A
A
W
°C
°C
g
Jan.1999




Mitsubishi Electric Semiconductor

FX30SMJ-3 Datasheet Preview

FX30SMJ-3 Datasheet

Pch POWER MOSFET

No Preview Available !

PRELIMINARYNSootimcee: pTahriasmisentroict alimfinitsalasrpeescuifbicjeactitotno. change.
MITSUBISHI Pch POWER MOSFET
FX30SMJ-3
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = –1mA, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = –150V, VGS = 0V
ID = –1mA, VDS = –10V
ID = –15A, VGS = –10V
ID = –15A, VGS = –4V
ID = –15A, VGS = –10V
ID = –15A, VDS = –10V
VDS = –10V, VGS = 0V, f = 1MHz
VDD = –80V, ID = –15A, VGS = –10V, RGEN = RGS = 50
IS = –15A, VGS = 0V
Channel to case
IS = –30A, dis/dt = 100A/µs
Min.
–150
–1.0
Limits
Typ.
–1.5
78
85
–1.17
41.3
11430
674
320
61
99
878
330
–1.0
100
Max.
±0.1
–0.1
–2.0
100
111
–1.50
–1.5
0.83
Unit
V
µA
mA
V
m
m
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
200
160
120
80
40
0
0 50 100 150 200
MAXIMUM SAFE OPERATING AREA
–2
–102
–7
–5
–3
–2
tw = 10µs
100µs
–101
–7
–5
–3
–2
1ms
10ms
–100
DC
–7
–5 TC = 25°C
–3 Single Pulse
–2
–2 –3 –5–7–101 –2 –3 –5–7–102 –2 –3 –5–7–103 –2
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
–50
TC = 25°C
–40 VGS = –10V
–6V Pulse Test
–5V
–4V –3.5V
–30
–3V
–20
PD = 150W
–10
OUTPUT CHARACTERISTICS
(TYPICAL)
–20
VGS = –10V
–6V
–4V
–16
–3V TC = 25°C
Pulse Test
–12
–8 –2.5V
–4
0
0 –2 –4 –6 –8 –10
DRAIN-SOURCE VOLTAGE VDS (V)
0
0 –1.0 –2.0 –3.0 –4.0 –5.0
DRAIN-SOURCE VOLTAGE VDS (V)
Jan.1999


Part Number FX30SMJ-3
Description Pch POWER MOSFET
Maker Mitsubishi Electric Semiconductor
Total Page 4 Pages
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