RD07MVS1B mosfet equivalent, silicon rf power mosfet.
Pout>7W, Gp>10dB @Vdd=7.2V,f=520MHz High Efficiency: 60%typ. (175MHz) High Efficiency: 55%typ. (520MHz)
www.DataSheet.net/
0.2+/-0.05
0.9+/-0.1
High power gain:
Termi.
RD07MVS1B improved a drain surge than RD07MVS1 by optimizing MOSFET structure.
1 2
3.5+/-0.05
Datasheet pdf - http://w.
Image gallery
Download