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SRF3090CE - (SRF3070CE - SRF30100CE) Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers

Download the SRF3090CE datasheet PDF (SRF30100CE included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for (srf3070ce - srf30100ce) switchmode full plastic dual schottky barrier power rectifiers.

Features

  • epitaxial construction with oxide www. datasheet4u. com passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.
  • Low Forward Voltage.
  • Low Switching noise.
  • High Current Capacity.
  • Guarantee Reverse Avalanche.
  • Guard-Ring for Stress Protection.
  • Low Power Loss & High efficiency.
  • 150¢J Operating Junction Temperature.
  • Low Stored Charge Majority Carrier Conduction.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SRF30100CE_MospecSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SRF3090CE
Manufacturer Mospec Semiconductor
File Size 208.70 KB
Description (SRF3070CE - SRF30100CE) Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers
Datasheet download datasheet SRF3090CE Datasheet

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Other Datasheets by Mospec Semiconductor
  • SRF3090 - (SRF3070 - SRF30100) Switchmode Full Plastic Dual Schgottky Barrier Power Rectifiers
  • SRF30100 - (SRF3070 - SRF30100) Switchmode Full Plastic Dual Schgottky Barrier Power Rectifiers
  • SRF30100CE - (SRF3070CE - SRF30100CE) Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers
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  • SRF3030 - (SRF3030 - SRF3060) Switchmode Full Plastic Dual Schgottky Barrier Power Rectifiers
  • SRF3035 - (SRF3030 - SRF3060) Switchmode Full Plastic Dual Schgottky Barrier Power Rectifiers
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Full PDF Text Transcription

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MOSPEC Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers SRF3070CE Thru SRF30100CE SCHOTTKY BARRIER RECTIFIERS 30 AMPERES 70-100 VOLTS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide www.datasheet4u.com passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. * Low Forward Voltage. * Low Switching noise. * High Current Capacity * Guarantee Reverse Avalanche. * Guard-Ring for Stress Protection. * Low Power Loss & High efficiency. * 150¢J Operating Junction Temperature * Low Stored Charge Majority Carrier Conduction.
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