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16N25E Datasheet MTB16N25E

Manufacturer: Motorola Semiconductor (now NXP Semiconductors)

Overview

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB16N25E/D Designer's TMOS E-FET .

Key Features

  • istance (Figure 9) shows how typical switching performance is affected by the parasitic circuit elements. If the parasitics were not present, the slope of the curves would maintain a value of unity regardless of the switching speed. The circuit used to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a re.