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1N2171A - TEMPERATURE-COMPENSATED ZENER REFERENCE DIODES

This page provides the datasheet information for the 1N2171A, a member of the 1N2163 TEMPERATURE-COMPENSATED ZENER REFERENCE DIODES family.

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1N2163 thru 1N2171 (SILICON) lN2163A thru lN2171A lN3580, A, Bthru lN3583, A, B TEMPERATURE-COMPENSATED ZENER REFERENCE DIODES Highly reliable reference sources utilizing an oxide-passivated junction for long-term voltage stability. Construction consists of welded hermetically sealed metal and glass case. • Low Dynamic Impedance • Choice of Three Temperature Ranges • "Box Method" Specifications Guarantee Maximum Voltage De- viation. Temperature compensated reference diodes are made by taking advantage of the differing thermal characteristics of forward and reverse biased silicon PN junctions. A forward biased junction has a negative temperature coefficient of approximately 2.0 millivoltsfC. Reverse biased junctions above 5.
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