900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Motorola Electronic Components Datasheet

1N5456A Datasheet

Silicon Tuning Diodes

No Preview Available !

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Silicon Tuning Diodes
These are epitaxial passivated abrupt junction tuning diodes designed for electronic
tuning, FM, AFC and harmonic–generation applications in AM through UHF ranges,
providing solid–state reliability to replace mechanical tuning methods.
Excellent Q Factor at High Frequencies
Guaranteed Capacitance Change — 2.0 to 30 V
Capacitance Tolerance — 10% and 5.0%
Complete Typical Design Curves
1N5446ARL
1N5448ARL
1N5456A
6.8 – 100 pF
30 VOLTS
VOLTAGE–VARIABLE
CAPACITANCE DIODES
2
MAXIMUM RATINGS(1)
1 CASE 51–02
(DO–204AA)
Rating
Symbol
Value
Unit
Reverse Voltage
Device Dissipation @ TA = 25°C
Derate above 25°C
VR 30 Volts
PD 400 mW
2.67 mW/°C
Operating Junction Temperature Range
TJ
+175
°C
Storage Temperature Range
Tstg – 65 to + 200
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Reverse Breakdown Voltage (IR = 10 µAdc)
Reverse Voltage Leakage Current (VR = 25 Vdc, TA = 25°C)
Reverse Voltage Leakage Current (VR = 25 Vdc, TA = 150°C)
Series Inductance (f = 250 MHz, lead length 1/16)
Case Capacitance (f = 1.0 MHz, lead length 1/16)
Diode Capacitance Temperature Coefficient
(Note 6) (VR = 4.0 Vdc, f = 1.0 MHz)
V(BR)R
IR
LS
CC
TCC
30
— — Vdc
— 0.02 µAdc
— 20
4.0 — nH
0.17 —
pF
300 — ppm/°C
CT, Diode Capacitance
VR = 4.0 Vdc, f = 1.0 MHz
pF
Device
Min
(Nom –10%)
Nom
Max
(Nom +10%)
1N5446ARL
1N5448ARL
1N5456A
16.2
19.8
90
1. Indicates JEDEC Registered Data.
18
22
100
19.8
24.2
110
TR, Tuning Ratio
C2/C30
f = 1.0 MHz
Min Max
2.6 3.2
2.6 3.2
2.7 3.3
Q, Figure of Merit
VR = 4.0 Vdc,
f = 50 MHz
Min
350
350
175
(Replaces 1N5441A/D)
5–6
Motorola Small–Signal Transistors, FETs and Diodes Device Data


Motorola Electronic Components Datasheet

1N5456A Datasheet

Silicon Tuning Diodes

No Preview Available !

1N5446ARL 1N5448ARL 1N5456A
PARAMETER TEST METHODS
1. LS, SERIES INDUCTANCE
LS is measured on a shorted package at 250 MHz using
an impedance bridge (Boonton Radio Model 250A RX
Meter or equivalent).
2. CC, CASE CAPACITANCE
CC is measured on an open package at 1.0 MHz using a
capacitance bridge (Boonton Electronics Model 75A or
equivalent).
3. CT, DIODE CAPACITANCE
(CT = CC + CJ). CT is measured at 1.0 MHz using a ca-
pacitance bridge (Boonton Electronics Model 75A or
equivalent).
4. TR, TUNING RATIO
TR is the ratio of CT measured at 2.0 Vdc divided by CT
measured at 30 Vdc.
5. Q, FIGURE OF MERIT
Q is calculated by taking the G and C readings of an ad-
mittance bridge at the specified frequency and substitut-
ing in the following equations:
+Q
2pfC
G
(Boonton Electronics Model 33AS8 or equivalent).
7. TCC, DIODE CAPACITANCE TEMPERATURE
COEFFICIENT
TCC is guaranteed by comparing CT at VR = 4.0 Vdc,
f = 1.0 MHz, TA = –65°C with CT at VR = 4.0 Vdc, f =
1.0 MHz, TA = +85°C in the following equation, which de-
fines TCC:
+ Ť ) ) ŤTCC CT(
85°C) – CT(–65°C)
85 65
·
106
CT(25°C)
Accuracy limited by CT measurement to ± 0.1 pF.
1.046
1.036
1.026
VR = 2.0 Vdc
1.016
1.006
0.996
VR = 4.0 Vdc
VR = 30 Vdc
0.986
0.976
0.966
–75
–50 –25 0 +25 +50 +75 +100 +125
TJ, TEMPERATURE (°C)
Figure 1. Normalized Diode Capacitance
versus Junction Temperature
1000
500
200
100
50
20
10
5.0
2.0
1.0
0.1
0.2
TYPICAL DEVICE PERFORMANCE
0.5 1.0 2.0
5.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Diode Capacitance versus Reverse Voltage
10
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TA = 25°C
f = 1.0 MHz
1N5456A
20 30
5–7


Part Number 1N5456A
Description Silicon Tuning Diodes
Maker Motorola
Total Page 3 Pages
PDF Download

1N5456A Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 1N5456 GENERAL PURPOSE ABRUPT VARACTOR DIODES
Knox Semiconductor Inc
2 1N5456 Silicon Abrupt Varactors
Aeroflex
3 1N5456 Diode VAR Cap Single 30V 100pF 2-Pin DO-7
New Jersey Semiconductor
4 1N5456A SILICON EPICAP DIODES
ETC
5 1N5456A Silicon Tuning Diodes
Motorola
6 1N5456A Diode VAR Cap Single 30V 100pF 2-Pin DO-7
New Jersey Semiconductor
7 1N5456B Diode VAR Cap Single 30V 100pF 2-Pin DO-7
New Jersey Semiconductor
8 1N5456C Diode VAR Cap Single 30V 100pF 2-Pin DO-7
New Jersey Semiconductor
9 1N5456D Diode VAR Cap Single 30V 100pF 2-Pin DO-7
New Jersey Semiconductor





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy