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2N1984 - NPN silicon annular small-signal transistor

This page provides the datasheet information for the 2N1984, a member of the 2N1983 NPN silicon annular small-signal transistor family.

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1983 2N (SILICON) 2N1984 NPN silicon annular small-signal transistor. CASE 31 (TO·5) Collector connected to cas. MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation @TA = 25° C Derate above 25°C Total Device Dissipation@ TC = 25°C Derate above 25° C Operating and Storage Junction Temperature Range Symbol Value Unit VCEO 25 Vdc VCB 50 Vdc VEB 5.0 Vdc IC 1.0 Adc PD 0.6 Watt 4.8 mW/oC PD 2.0 Watts 16 mW/oC TJ , T stg -65 to +150 °c THERMAL CHARACTERISTICS Characteristic Symbol Max Thermal Resistance, Junction to Case 8JC 62.5 Thermal Resistance, Junction to Ambient 8JA 208 Unit °C/W °C/W 2-231 2N1983, 2N1984 (continued) = ELECTRICAL CHARACTERISTICS (T.
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