2N2369 Datasheet | Motorola Semiconductor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N2369/D Switching Transistors NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 2N2369 2N2369A- - Motorola Preferred Device MAXIMUM RATINGS Rating Collector - Emitter Voltage Collector - Emitter Voltage Collector- Base Voltage Emitter- Base Voltage Collector Current (10 ms pulse) Collector Current - Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 100°C Derate above 100°C Operating and Storage Junction Temperature Range Symbol VCEO VCES VCBO VEBO IC(Peak) IC PD PD TJ, Tstg Value 15 40 40 4.5 500 200 0.36 2.06 0.68 6.85 - 65 to +200 Unit Vdc Vdc Vdc Vdc m A m A Watt m W/°C Watts m W/°C °C CASE 22- 03, STYLE 1 TO- 18 (TO- 206AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol Rq JA Rq JC Max 486 147 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage (IC = 10 m A, VBE = 0) Collector - Emitter Sustaining Voltage(1) (IC = 10 m Adc, IB = 0) Collector - Base Breakdown Voltage (IC = 10 m A, IB = 0) Emitter - Base Breakdown Voltage (IE = 10 m Adc, IC = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) (VCB = 20 Vdc, IE = 0, TA = 150°C) Collector Cutoff Current (VCE = 20 Vdc, VBE = 0) Base Current (VCE = 20 Vdc, VBE = 0) 1. Pulse Test: Pulse Width 2N2369 2N2369A ICES 2N2369A IB 2N2369A - 0.4 V(BR)CES VCEO(sus) V(BR)CBO V(BR)EBO ICBO - - - 0.4 30 0.4 40 15 40 4.5 - - - - Vdc Vdc Vdc Vdc m Adc m Adc m Adc v 300 ms, Duty Cycle v...