* Low current (max. 200 mA)
* Low voltage (max. 15 V). APPLICATIONS
* High-speed switching
* VHF amplification. handbook, halfpage 1 2N2369 PINNING PIN 1 2 3 emitter base collector, connected to case DESCRIPTION 3 2 DESCRIPTION NPN switching transistor in a TO-18 m
2N2369
Philips
52.19 KB
Npn switching transistor.
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D125
2N2369 NPN switching transistor
Product specification Supersedes data of September 1994 File under Discret.
📁 Related Datasheet
2N2368 - SWITCHING TRANSISTOR
(Motorola)
2N2368
2N2369,A 2N3227
2N2369A JAN, JTX, JTXV AVAILABLE CASE 22, STYLE 1 TO-18 (TO-206AA)
SWITCHING TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
C.
2N2368 - Silicon Planar Epitaxial NPN Transistor
(STMicroelectronics)
.
2N2368 - Bipolar NPN Device
(Seme LAB)
2N2368
Dimensions in mm (inches).
5.84 (0.230) 5.31 (0.209)
4.95 (0.195) 4.52 (0.178)
Bipolar NPN Device in a Hermetically sealed TO18
Metal Package.
2N2369 - Bipolar NPN Device
(Seme LAB)
2N2369
Dimensions in mm (inches).
5.84 (0.230) 5.31 (0.209)
4.95 (0.195) 4.52 (0.178)
Bipolar NPN Device in a Hermetically sealed TO18
Metal Package.
2N2369 - NPN SILICON PLANAR EPITAXIAL TRANSISTORS
(CDIL)
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
2N2369 2N2369A TO.
2N2369 - Switching Transistors
(Motorola)
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N2369/D
Switching Transistors
NPN Silicon
COLLECTOR 3 2 BASE 1 EMITTER
2N2369 2N2369.
2N2369 - Silicon Planar Epitaxial NPN transistor
(STMicroelectronics)
2N2369
HIGH-FREQUENCY SATURATED SWITCH
DESCRIPTION The 2N2369 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. It is designed s.
2N2369 - High Speed Switching Transistors
(Multicomp)
2N2369, 2369A
High Speed Switching Transistors
Features:
• NPN Silicon Planar Epitaxial Transistors. • Fast switching devices exhibiting short turn-of.
