Continental Device India 2N2369
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
| Part No. | 2N2369 |
|---|---|
| Datasheet | 2N2369 Download |
| Manufacturer |  Continental Device India |
| Description | NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
| Buy | Stock & Price |
APPLICATIONS
2N2369/A are NPN Silicon High Speed Saturated Switching, Transistors With Low Power & High Speed SwitchingAPPLICATIONS
.ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector -Emitter Voltage Collector -Emitter Voltage SYMBOL VCEO VCES VALUE 15 40 Collector -Base Voltage VCBO 40 Emitter -Base Voltage Collector Current Continuous Collector Current Peak(10us pulse) VEBO IC IC(peak) 4.5 200 500 Power Dissipation@ Ta=25 degC PD 360 Derate Above 25 deg C @Tc=25 deg C @Tc=100 deg C PD PD 2.06 1.2 0.68 Derate Above100 deg C 6.85 Operating And Storage Junction Tj, Tstg -65 to +200 Temperature RangeELECTRICAL CHARACTERISTICS
(Ta=25 deg C Unless Otherwise Specified)DESCRIPTION
SYMBOL TEST CONDITION 2N2369 Collector -Emitter Voltage Collector -Emitter Voltage Collector -Base Voltage VCEO*(sus)IC=10mA, IB=0 VC
