2N2369 - NPN SILICON PLANAR EPITAXIAL TRANSISTORS

CDIL

General Description

Collector -Emitter Voltage Collector -Emitter Voltage SYMBOL VCEO VCES VALUE 15 40 Collector -Base Voltage VCBO 40 Emitter -Base Voltage Collector Current Continuous Collector Current Peak(10us pulse) VEBO IC IC(peak) 4.5 200 500 Power Dissipation@ Ta=25 degC PD 360 Derate Above 25 deg C

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2N2369 npn silicon planar epitaxial transistors by CDIL - Datasheet Preview

Datasheet Details

Part number	2N2369
Manufacturer	CDIL
File Size	89.20 KB
Description	NPN SILICON PLANAR EPITAXIAL TRANSISTORS
Datasheet	2N2369 Datasheet

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Other Datasheets by CDIL

Part Number	Description
2N2369A	NPN SILICON PLANAR EPITAXIAL TRANSISTORS
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2N2218	NPN SILICON PLANAR SWITCHING TRANSISTORS
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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N2369 2N2369A TO-18 APPLICATIONS 2N2369/A are NPN Silicon High Speed Saturated Switching, Transistors With Low Power & High Speed Switching Applications. ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector -Emitter Voltage Collector -Emitter Voltage SYMBOL VCEO VCES VALUE 15 40 Collector -Base Voltage VCBO 40 Emitter -Base Voltage Collector Current Continuous Collector Current Peak(10us pulse) VEBO IC IC(peak) 4.5 200 500 Power Dissipation@ Ta=25 degC PD 360 Derate Above 25 deg C @Tc=25 deg C @Tc=100 deg C PD PD 2.06 1.2 0.68 Derate Above100 deg C 6.