• Part: 2N2369
  • Description: NPN SILICON PLANAR EPITAXIAL TRANSISTORS
  • Category: Transistor
  • Manufacturer: Continental Device India
  • Size: 89.20 KB
2N2369 Datasheet (PDF) Download
Continental Device India
2N2369

Description

Collector -Emitter Voltage Collector -Emitter Voltage SYMBOL VCEO VCES VALUE 15 40 Collector -Base Voltage VCBO 40 Emitter -Base Voltage Collector Current Continuous Collector Current Peak(10us pulse) VEBO IC IC(peak) 4.5 200 500 Power Dissipation@ Ta=25 degC PD 360 Derate Above 25 deg C @Tc=25 deg C @Tc=100 deg C PD PD 2.06 1.2 0.68 Derate Above100 deg C 6.85 Operating And Storage Junction Tj, Tstg -65 to +200 Temperature Range DESCRIPTION SYMBOL TEST CONDITION 2N2369 Collector -Emitter Voltage Collector -Emitter Voltage Collector -Base Voltage VCEO*(sus)IC=10mA, IB=0 VC.