Philips 2N2369A
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later.| Part No. | 2N2369A |
|---|---|
| Datasheet | 2N2369A Download |
| Manufacturer |  Philips |
| Description | NPN switching transistor |
| Buy | Stock & Price |
FEATURES
● Low current (max. 200 mA)● Low voltage (max.15 V).
APPLICATIONS
● High-speed saturated switching and high frequency amplifier applications.DESCRIPTION
NPN switching transistor in a TO-18 metal package. PINNING PIN 1 2 3DESCRIPTION
emitter base collector, connected to case handbook, halfpa1ge 2 3 2 MAM264 3 1 Fig.1 Simplified outline (TO-18) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER VCBO VCEO IC Ptot hFE collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain fT transition frequency toff turn-off time CONDITIONS open emitter open base Tamb ≤ 25 °C IC = 10 mA; VCE = 350 mV IC = 10 mA; VCE = 1 V IC = 10 mA; VCE = 10 V; f = 100 MHz ICon = 10 mA; IBon = 3 mA; IBoff = −1.5 mA MIN. − − − − 40 − 500 − MAX. 40 15 200 360 − 120 − 30 UNIT V V mA mW MHz ns 1998 Mar 03 2 Philips Semiconductors NPN switching transistor Product specification 2N2369A LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
