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2N2369A
HIGH-SPEED SATURATED SWITCH
DESCRIPTION The 2N2369A is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. It is designed specifically for high-speed saturated switching applications at current levels from 100 µA to 100 mA.
TO-18
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CB O V CE S V CE O V EB O IC I CM Pt ot Parameter Collector-base Voltage (I E = 0) Collector-emitter Voltage (V BE = 0) Collector-emitter Voltage (I B = 0) Emitter-base Voltage (I C = 0) Collector Current Collector Current (10 µs pulse) Total Power Dissipation at T amb ≤ 25 °C at T c ase ≤ 25 °C at T c ase ≤ 100 °C Storage and Junction Temperature Value 40 40 15 4.5 0.2 0.5 0.36 1.2 0.