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2N2369A - NPN SILICON PLANAR EPITAXIAL TRANSISTORS

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Part number 2N2369A
Manufacturer CDIL
File Size 89.20 KB
Description NPN SILICON PLANAR EPITAXIAL TRANSISTORS
Datasheet download datasheet 2N2369A Datasheet
Note This datasheet PDF includes multiple part numbers: 2N2369A, 2N2369.
Please refer to the document for exact specifications by model.
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Collector -Emitter Voltage Collector -Emitter Voltage SYMBOL VCEO VCES VALUE 15 40 Collector -Base Voltage VCBO 40 Emitter -Base Voltage Collector Current Continuous Collector Current Peak(10us pulse) VEBO IC IC(peak) 4.5 200 500 Power Dissipation@ Ta=25 degC PD 360 Derate Above 25 deg C @Tc=25 deg C @Tc=100 deg C PD PD 2.06 1.2 0.68 Derate Above100 deg C 6.85 Operating And Storage Junction Tj, Tstg -65 to +200 Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless

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