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2N2369A - NPN SILICON PLANAR EPITAXIAL TRANSISTORS

Download the 2N2369A datasheet PDF. This datasheet also covers the 2N2369 variant, as both devices belong to the same npn silicon planar epitaxial transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

Collector -Emitter Voltage Collector -Emitter Voltage SYMBOL VCEO VCES VALUE 15 40 Collector -Base Voltage VCBO 40 Emitter -Base Voltage Collector Current Continuous Collector Current Peak(10us pulse) VEBO IC IC(peak) 4.5 200 500 Power Dissipation@ Ta=25 degC PD 360 Derate Above 25 deg C

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Note: The manufacturer provides a single datasheet file (2N2369-CDIL.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2N2369A
Manufacturer CDIL
File Size 89.20 KB
Description NPN SILICON PLANAR EPITAXIAL TRANSISTORS
Datasheet download datasheet 2N2369A Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N2369 2N2369A TO-18 APPLICATIONS 2N2369/A are NPN Silicon High Speed Saturated Switching, Transistors With Low Power & High Speed Switching Applications. ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector -Emitter Voltage Collector -Emitter Voltage SYMBOL VCEO VCES VALUE 15 40 Collector -Base Voltage VCBO 40 Emitter -Base Voltage Collector Current Continuous Collector Current Peak(10us pulse) VEBO IC IC(peak) 4.5 200 500 Power Dissipation@ Ta=25 degC PD 360 Derate Above 25 deg C @Tc=25 deg C @Tc=100 deg C PD PD 2.06 1.2 0.68 Derate Above100 deg C 6.