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2N2369 - High Speed Metal Can Transistor

General Description

2N2369 2N2369A VCEO Collector-Emitter Voltage 15 VCES VCBO Collector-Emitter Voltage Collector-Base Voltage 40 40 VEBO IC Emitter-Base Voltage Collector Current Continuous 4.5 200 IC(peak) Collector Current Peak (10us pulse) Power Dissipation at TA=25°C 500 360 Power Dissipation Derat

Key Features

  • High Speed Switching.

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Datasheet Details

Part number 2N2369
Manufacturer TAITRON
File Size 174.35 KB
Description High Speed Metal Can Transistor
Datasheet download datasheet 2N2369 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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High Speed Metal Can Transistor (NPN) Features • High Speed Switching Application • Low Power • RoHS Compliant Mechanical Data Case: Terminals: Weight: TO-18, Metal can package Solderable per MIL-STD-202, Method 208 0.35 grams High Speed Metal Can Transistor (NPN) 2N2369/2N2369A TO-18 Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description 2N2369 2N2369A VCEO Collector-Emitter Voltage 15 VCES VCBO Collector-Emitter Voltage Collector-Base Voltage 40 40 VEBO IC Emitter-Base Voltage Collector Current Continuous 4.5 200 IC(peak) Collector Current Peak (10us pulse) Power Dissipation at TA=25°C 500 360 Power Dissipation Derate above TA=25°C 2.06 PD Power Dissipation at TC=25°C 1.2 Power Dissipation at TC=100°C 0.