Datasheet Details
| Part number | 2N2369 |
|---|---|
| Manufacturer | TAITRON |
| File Size | 174.35 KB |
| Description | High Speed Metal Can Transistor |
| Datasheet | 2N2369-TAITRON.pdf |
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Overview: High Speed Metal Can Transistor (NPN).
| Part number | 2N2369 |
|---|---|
| Manufacturer | TAITRON |
| File Size | 174.35 KB |
| Description | High Speed Metal Can Transistor |
| Datasheet | 2N2369-TAITRON.pdf |
|
|
|
2N2369 2N2369A VCEO Collector-Emitter Voltage 15 VCES VCBO Collector-Emitter Voltage Collector-Base Voltage 40 40 VEBO IC Emitter-Base Voltage Collector Current Continuous 4.5 200 IC(peak) Collector Current Peak (10us pulse) Power Dissipation at TA=25°C 500 360 Power Dissipation Derate above TA=25°C 2.06 PD Power Dissipation at TC=25°C 1.2 Power Dissipation at TC=100°C 0.68 Power Dissipation Derate above TC=100°C 6.85 TJ, TSTG Operating Junction and Storage Temperature Range -65 to +200 Unit V V V V mA mA mW mW/° C W W mW/° C °C TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON (800)-824-8766 Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6060 (661)-257-6415 Rev.
A/AH Page 1 of 4 High Speed Metal Can Transistor (NPN) 2N2369/2N2369A Electrical Characteristics (T Ambient=25ºC unless noted otherwise) Symbol *VCEO(SUS) VCES VCBO VEBO Description Collector-Emitter Voltage Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage 2N2369 hFE D.C.
Current Gain 2N2369A *VCE(sat) 2N2369 Collector-Emitter Saturation Voltage 2N2369A *VBE(sat) Base-Emitter Saturation Voltage 2N2369 2N2369A ICBO ICES IB ft Cob ton toff ts Collector-Cut-off Current Collector-Cut-off Current Base Current 2N2369 2N2369A 2N2369A Transition Frequency Out-Put Capacitance Turn-On Time Turn-Off Time 2N2369A Storage Time Min.
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| Part Number | Description |
|---|---|
| 2N2369A | High Speed Metal Can Transistor |
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