Philips 2N2484
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later.| Part No. | 2N2484 |
|---|---|
| Datasheet | 2N2484 Download |
| Manufacturer |  Philips |
| Description | NPN general purpose transistor |
| Buy | Stock & Price |
FEATURES
● Low current (max. 50 mA)● Low voltage (max. 60 V)
APPLICATIONS
● General purpose switching and amplification● High performance (low-level), low-noise amplifier applications both for direct current and frequencies up to 100 MHz.
DESCRIPTION
NPN transistor in a TO-18; SOT18 metal package. Fig.1 handbook, halfpage 1 2N2484 PINNING PIN 1 2 3 emitter base collector, connected to the caseDESCRIPTION
3 2 2 3 MAM264 1 Simplified outline (TO-18; SOT18) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO ICM Ptot hFE PARAMETER collector-base voltage collector-emitter voltage peak collector current total power dissipation DC current gain Tamb ≤ 25 °C IC = 10 µA; VCE = 5 V IC = 1 mA; VCE = 5 V IC = 10 mA; VCE = 5 V fT transition frequency open base CONDITIONS open emitter − − − − 100 250 − MIN. − − − − − − − 80 TYP. MAX. 60 60 100 360 500 − 800 − MHz V V mA mW UNIT IC = 0.5 mA; VCE = 5 V; f = 100 MHz 60 1997 May 01 2 Philips Semiconductors Product specification NPN general purpose transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
