Datasheet4U Logo Datasheet4U.com

2N2484 - NPN SILICON AMPLIFIER TRANSISTOR

📥 Download Datasheet

Datasheet Details

Part number 2N2484
Manufacturer Seme LAB
File Size 35.13 KB
Description NPN SILICON AMPLIFIER TRANSISTOR
Datasheet download datasheet 2N2484 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2N2484 NPN SILICON TRANSISTOR Central Semiconductor
2N2484 NPN Transistor SGS-ATES
2N2484 NPN general purpose transistor Philips
2N2484 NPN SILICON LOW POWER TRANSISTOR Microsemi
2N2484 SILICON PLANAR EPITAXIAL TRANSISTORS Comset Semiconductor

Other Datasheets by Seme LAB

Part Number Description
2N2484CSM NPN GENERAL PURPOSE TRANSISTOR
2N2432 Bipolar NPN Device
2N2060A DUAL AMPLIFIER TRANSISTOR
2N2102 Bipolar NPN Device
2N2192 Bipolar NPN Device

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SEME LAB MECHANICAL DATA Dimensions in mm (inches) 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) 2N2484 NPN SILICON AMPLIFIER TRANSISTOR FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 4.32 (0.170) 12.7 (0.500) 5.33 (0.210) min. 0.48 (0.019) 0.41 (0.016) dia. 2.54 (0.100) Nom. 31 2 TO18 PIN 1 = Emitter PIN 2 = Base PIN 3 = Collector ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage VCEO Collector – Emitter Voltage VEBO Emitter – Base Voltage IC Collector Current Continuous PD Total Device Dissipation @ TA =25°C Derate above 25°C 60V 60V 6V 50mA 360mW 2.06mW / °C PD Total Device Dissipation @ TC =25°C Derate above 25°C 1.2W 6.