Seme LAB 2N2484
NPN SILICON AMPLIFIER TRANSISTOR
MECHANICAL DATA
Dimensions in mm (inches) 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) 2N2484 NPN SILICON AMPLIFIER TRANSISTORFEATURES
● SILICON PLANAR EPITAXIAL NPN TRANSISTOR 4.32 (0.170) 12.7 (0.500) 5.33 (0.210) min. 0.48 (0.019) 0.41 (0.016) dia. 2.54 (0.100) Nom. 31 2 TO18 PIN 1 = Emitter PIN 2 = Base PIN 3 = CollectorABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage VCEO Collector – Emitter Voltage VEBO Emitter – Base Voltage IC Collector Current Continuous PD Total Device Dissipation @ TA =25°C Derate above 25°C 60V 60V 6V 50mA 360mW 2.06mW / °C PD Total Device Dissipation @ TC =25°C Derate above 25°C 1.2W 6.85mW / °C TSTG , TJ Operating and Storage Temperature Range –65 to +200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time