ABSOLUTE MAXIMUM RATINGS
Symbol VCEO VCBO VEBO IC PD TJ TStg Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current @ Tamb = 25° Value 60 60 6 50 0.36 1.2 0.68 200 -65 to +200 Unit V V V mA Watts °C °C Total Power Dissipation Junction Temperature Storage Temperature range @ Tcase= 25° @ Tcase<100° THERMAL CHARACTERISTICS Symbol RthJ-a RthJ-c Ratings Thermal Resistance, Junction-ambient Thermal Resistance, Junction-case Value 486 146 Unit °C/ W °C/ W COMSET SEMICONDUCTORS 1/3 Datasheet pdf - NPN 2N2484 ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted Symbol ICBO ICBO IEBO VCEO (*) VCBO VEBO Ratings Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Collector Emitter Breakdown Voltage Collector Base Breakdown Voltage Emitter Base Breakdown Voltage Test Condition(s) VCB=45 V, IE=0 VCB=45 V, IE=0 Tj=150°C VBE=5.0 V, IC=0 IC=10 mA, IB=0 IC=10 µA, IE=0 IE=10 µA, IC=0 IC=1 µA, VCE =5 V IC=10 µA, VCE =5 V IC=100 µA, VCE =5...
Comset Semiconductor
