Microsemi 2N2484
NPN SILICON LOW POWER TRANSISTOR
| Part No. | 2N2484 |
|---|---|
| Datasheet | 2N2484 Download |
| Manufacturer |  Microsemi |
| Description | NPN SILICON LOW POWER TRANSISTOR |
| Buy | Stock & Price |
MAXIMUM RATINGS
Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C (1) @ TC = +250C (2) Operating & Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PT TJ, Tstg Symbol RθJC 2N2484 60 60 6.0 50 360 1.2 -65 to +200 Max. 146 Unit Vdc Vdc Vdc mAdc mW W 0 C Unit C/W THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 2.06 mW/0C above TA = +250C 2) Derate linearly 6.85 mW/0C above TC = +250C 0 TO- 18* (TO-206AA) *See appendix A for package outlineELECTRICAL CHARACTERISTICS
(TA = 250C unless otherwise noted) Characteristics Symbol V(BR)CEO ICES ICBO ICEO IEBO Min. 60 5.0 5.0 10 2.0 2.0 10 Max. Unit Vdc ηAdc ηAdc µAdc ηAdc ηAdc µAdc OFF CHARACTERISTICS Collector-Emitter Breakdown Current IC = 10 mAdc Collector-Emitter Cutoff Current VCE = 45 Vdc Collector-Base Cutoff Current VCB = 45 Vdc VCB = 60 Vdc Collector-Emitter Cutoff Current VCE = 5.0 Vdc Emitter-Bas...