| Part Number | 2N2484 |
|---|---|
| Manufacturer | Comset Semiconductor |
| Overview | NPN 2N2484 SILICON PLANAR EPITAXIAL TRANSISTORS The 2N2484 are a silicon planar epitaxial NPN transistors mounted in TO-18 metal package. They are intended for use in high-performance, low-noise ampli. urrent Collector Cutoff Current Emitter Cutoff Current Collector Emitter Breakdown Voltage Collector Base Breakdown Voltage Emitter Base Breakdown Voltage Test Condition(s) VCB=45 V, IE=0 VCB=45 V, IE=0 Tj=150°C VBE=5.0 V, IC=0 IC=10 mA, IB=0 IC=10 µA, IE=0 IE=10 µA, IC=0 IC=1 µA, VCE =5 V IC=10 µA. |
2N2484 Datasheet
The 2N2484 is a SILICON PLANAR EPITAXIAL TRANSISTORS.
| Part Number | 2N2484 |
|---|---|
| Description | NPN SILICON LOW POWER TRANSISTOR |
| Manufacturer | Microsemi |
| Overview | TECHNICAL DATA NPN SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/376 Devices 2N2484 Qualified Level JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Em. or-Emitter Cutoff Current VCE = 45 Vdc Collector-Base Cutoff Current VCB = 45 Vdc VCB = 60 Vdc Collector-Emitter Cutoff Current VCE = 5.0 Vdc Emitter-Base Cutoff Current VEB = 5.0 Vdc VEB = 6.0 Vdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page . |
| Part Number | 2N2484 |
|---|---|
| Description | AMPLIFIER TRANSISTOR |
| Manufacturer | Motorola Semiconductor |
| Overview | MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Total Device Dissipation (2 T/ = 25°C Derate above 25°C Total Device Dissipat. . |
| Part Number | 2N2484 |
|---|---|
| Description | NPN SILICON TRANSISTOR |
| Manufacturer | Central Semiconductor |
| Overview | The CENTRAL SEMICONDUCTOR 2N2484 type is an NPN silicon transistor designed for low noise amplifier applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Vol. . |