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2N3905 - Transistors

Download the 2N3905 datasheet PDF. This datasheet also covers the 2N3906 variant, as both devices belong to the same transistors family and are provided as variant models within a single manufacturer datasheet.

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📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2N3906_Motorola.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
2N3905 Silicon PNP Transistor NTE
2N3905 PNP General Purpose Amplifier Fairchild Semiconductor
2N3905 Silicon PNP Transistor Toshiba
2N3905 SILICON PNP TRANSISTORS Central Semiconductor
2N3902 NPN Transistor INCHANGE

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
2N3902 HIGH VOLTAGE NPN SILICON TRANSISTORS
2N3903 NPN Transistor
2N3904 NPN Transistor
2N3906 Transistors
2N3909 P-Channel Amplifiers

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N3905/D General Purpose Transistors PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VCEO VCBO VEBO IC PD 40 Vdc 40 Vdc 5.0 Vdc 200 mAdc 625 mW 5.0 mW/°C Total Power Dissipation @ TA = 60°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD PD 250 mW 1.5 Watts 12 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg – 55 to +150 °C THERMAL CHARACTERISTICS(1) Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.
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