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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N3905/D
General Purpose Transistors
PNP Silicon
COLLECTOR 3
2 BASE
1 EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C Derate above 25°C
VCEO VCBO VEBO
IC PD
40 Vdc 40 Vdc 5.0 Vdc 200 mAdc 625 mW 5.0 mW/°C
Total Power Dissipation @ TA = 60°C
Total Device Dissipation @ TC = 25°C Derate above 25°C
PD PD
250 mW
1.5 Watts 12 mW/°C
Operating and Storage Junction Temperature Range
TJ, Tstg – 55 to +150
°C
THERMAL CHARACTERISTICS(1)
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA 200 °C/W
Thermal Resistance, Junction to Case
RqJC
83.
2N3906 Datasheet
