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2N4012 - NPN silicon annular transistor

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12 2N40 (SILICON) ~E3~ (TO·60) stud isolated from case NPN silicon annular transistor, designed for frequency multiplication applications. MAXI MUM RATI NGS (TA = 25°C unless otherwise noted) Rating Symbol Collector-Emitter Voltage Collector-Emitter Voltage (VEB(off) = 1. 5 Vdc) VCEO VCEV Collector-Base Voltage VCB Emitter-Base Voltage VEB Collector Current IC Total Device Dissipation @ TA = 25°C PD Derate Above 25°C Operating and Storage Junction Temperature Range TJ,Tstg Value 40 65 65 4.0 1.5 11.6 66.3 -65 to +200 Unit Vdc Vdc Vdc Vdc Amps Watts mW;oC °c FIGURE 1 - TRIPLER TEST CIRCUIT h .=. f,.~ 334 MHz +28 V r- - - - - - -17JZZ2'~:zzzzzzzz~ItiZZ02.Z2zpmfzzz:ZZZZZZZZzmzzzz:~ 2.7!l O.s..IOpF 1000 pf RFC I ~ 0.22 /LH RFC, ~ 0.33 OHMS, W. W.
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