Datasheet Summary
12 2N40 (SILICON)
~E3~ (TO- 60) stud isolated from case
NPN silicon annular transistor, designed for frequency multiplication applications.
MAXI MUM RATI NGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Collector-Emitter Voltage
Collector-Emitter Voltage (VEB(off) = 1. 5 Vdc)
VCEO VCEV
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Device Dissipation @ TA = 25°C
Derate Above 25°C
Operating and Storage Junction Temperature Range TJ,Tstg
Value
40 65
65 4.0 1.5 11.6 66.3 -65 to +200
Unit
Vdc Vdc
Vdc Vdc Amps Watts mW;oC °c
FIGURE 1
- TRIPLER TEST CIRCUIT h .=. f,.~ 334 MHz
+28 V r-
- -
- -
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