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2N4032 - GENERAL PURPOSE TRANSISTOR

Download the 2N4032 datasheet PDF. This datasheet also covers the 2N4026 variant, as both devices belong to the same general purpose transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N4026-Motorola.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
2N4030 GENERAL PURPOSE TRANSISTOR
2N4031 GENERAL PURPOSE TRANSISTOR
2N4033 GENERAL PURPOSE TRANSISTOR
2N4012 NPN silicon annular transistor
2N4015 DUAL AMPLIFIER TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MAXIMUM RATINGS Rating 2N4026/28 2N4027/29 Symbol 2N4030/32 2N4031/33 Unit Collector-Emitter Voltage) 1) VCEO 60 80 Vdc Collector-Base Voltage VCBO 60 80 Vdc Emitter-Base Voltage VEBO 5.0 5.0 Vdc —Collector Current Continuous @Total Device Dissipation Ta = 25°C Derate above 25°C Total Device Dissipation (a Tq = 25°C Derate above 25°C Operating and Storage Junction Temperature Range "C PD PD Tj. Tstg 2N40262N4029 2N40302N4033 1.0 1.0 .5 2.85 1.25 7.15 2.0 11.4 7.0 40 - 65 to + 200 Adc W mW/°C W mW/°C °C Lead or Terminal Temperature(2) TL + 300 °C mA(1) Applicable to 10 (2) Measured at a distance not less than 1/16" from seated surface (or case) for 60 Sec.