Datasheet Summary
Power Transistor
Description:
A Silicon PNP transistor in a TO-39 type case designed primarily for amplifier and switching applications. This device Features high breakdown voltage, low leakage current. Low capacity, and beta useful over an extremely wide current range.
Pin Configurations: 1. Emitter 2. Base 3. Collector
Maximum Ratings:
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter Base Voltage Continuous Collector Current Total Device Dissipation -(TA = +25°C), Derate Above 25°C Total Device Dissipation -(TC = +25°C), Derate Above 25°C Operating Junction Temperature Range Storage Temperature Range, Thermal Resistance, Junction-to-Case Thermal Resistance,...
