DESCRIPTION
: A Silicon PNP transistor in a TO-39 type case designed primarily for amplifier and switching applications. Low capacity, and beta useful over an extremely wide current range. Pin Configurations: 1. Emitter 2. Base 3. Collector MAXIMUM RATINGS
: Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter Base Voltage Continuous Collector Current Total Device Dissipation -(TA = +25°C), Derate Above 25°C Total Device Dissipation -(TC = +25°C), Derate Above 25°C Operating Junction Temperature Range Storage Temperature Range, Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Lead temperature (During Soldering, 1/16" from case, 60sec max) Symbol VCBO VCEO VEBO IC PD TJ Tstg RthJC RthJA TL Rating 60 5 1 0.8 4.56 4 22.8 -65 to +200 20 140 300 Unit V A W mW/°C °C °C/W °C Page <1> 23/04/13 V1.0 P
Multicomp
