DESCRIPTION
: A silicon PNP transistor in a TO-39 type case designed primarily for amplifier and switching applications. MAXIMUM RATINGS
: Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter Base Voltage Continuous Collector Current Total Device Dissipation -(TA = +25°C), Derate Above 25°C Total Device Dissipation -(TC = +25°C), Derate Above 25°C Operating Junction Temperature Range Storage Temperature Range Thermal Resistance, Junction-to-Case Lead temperature (During Soldering, 1/16" from case, 60sec max) Symbol VCBO VCEO VEBO IC PD TJ Tstg RthJC TL Rating 60 40 7 1 1 5.72 5 28.6 -65 to +200 35 300 Unit V A W mW/°C °C °C/W °C Page <1> 23/04/13 V1.0 Silicon Transistor ELECTRICAL CHARACTERISTICS
: (TA = +25°C Unless other
Multicomp
