Continental Device India 2N4037
PNP SILICON PLANAR EXPITAXIAL TRANSISTOR
APPLICATIONS
.ABSOLUTE MAXIMUM RATINGS
(Ta=25ºC unless specified otherwise)DESCRIPTION
SYMBOL Collector Emitter Voltage VCEO(sus) * Collector Base Voltage VCBO Emitter Base Voltage VEBO Collector Current Continuous IC Base Current IB Continuous Power Dissipation PD @ or Below Ta=25ºC Linear Derating Dissipation Operating And Storage Junction Tj, Tstg Temperature Range * Must not be tested on a curve tracer. VALUE 40 60 7.0 1.0 0.5 1.0 5.72 -65 to +200ELECTRICAL CHARACTERISTICS
(Ta=25ºC unless specified otherwise)DESCRIPTION
SYMBOL TEST CONDITION Collector Emitter susstaining Voltage V(BR)CEO(sus) IC=100mA,IB=0 Collector Base Breakdown Voltage V(BR)CBO IC=100µA,IE=0 Collector Cut off Current ICBO VCB=60V, IE=0 Emitter Cut off Current IEBO VBE=5V, IC=0 DC Current Gain hFE IC=1mA,VCE=10V IC=150mA,VCE=10V Collector Emitter (sat) Voltage VCE(Sat) IC=150mA,IB=15mA Base Emitter Voltage VBE(0n) IC=150mA,VCE=10V DYNAMIC CHARACTERISTICSDESCRIPTION
SYMBOL TEST CONDITION Collector Base Capacit...