2N4037 Datasheet and Specifications PDF

The 2N4037 is a PNP SILICON TRANSISTOR.

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Part Number2N4037 Datasheet
ManufacturerCentral Semiconductor
Overview The CENTRAL SEMICONDUCTOR 2N4036, 2N4037 are epitaxial planar PNP Silicon Transistors designed for small signal, medium power, general purpose industrial applications. MARKING: FULL PART NUMBER TO-3. 50mA, IB=15mA - 0.65 VBE(SAT) IC=150mA, IB=15mA - 1.4 VBE(ON) VCE=10V, IC=150mA
* hFE VCE=10V, IC=0.1mA 20 - hFE VCE=10V, IC=1.0mA
* hFE VCE=10V, IC=150mA 40 140 hFE VCE=2.0V, IC=150mA 20 200 hFE VCE=10V, IC=500mA 20 - fT VCE=10V, IC=50mA, f=20MHz 60 - Cob VCB=10V, IE=0, f=1.0.
Part Number2N4037 Datasheet
DescriptionGeneral Purpose Transistors
ManufacturerMotorola Semiconductor
Overview MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N4036/D General Purpose Transistors PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER 2N4036 2N4037 MAXIMUM RATINGS Rating Collector – Emitter. Symbol Min Max Unit OFF CHARACTERISTICS Collector
* Emitter Sustaining Voltage(1) (IC =
* 100 mAdc, IB = 0) Collector
* Base Breakdown Voltage (IC =
* 0.1 mAdc) Collector Cutoff Current (VCE =
* 85 Vdc, VEB =
* 1.5 Vdc) (VCE =
* 30 Vdc, VEB =
* 1.5 Vdc, TC = 150°C) Collector Cutoff Current (VCB =
*.
Part Number2N4037 Datasheet
DescriptionCOMPLEMENTARY SILICON TRANSISTORS
ManufacturerMicro Electronics
Overview . .
Part Number2N4037 Datasheet
DescriptionPNP SILICON PLANAR EXPITAXIAL TRANSISTOR
ManufacturerContinental Device India
Overview SYMBOL Collector Emitter Voltage VCEO(sus) * Collector Base Voltage VCBO Emitter Base Voltage VEBO Collector Current Continuous IC Base Current IB Continuous Power Dissipation PD @ or Be. C=0 DC Current Gain hFE IC=1mA,VCE=10V IC=150mA,VCE=10V Collector Emitter (sat) Voltage VCE(Sat) IC=150mA,IB=15mA Base Emitter Voltage VBE(0n) IC=150mA,VCE=10V DYNAMIC CHARACTERISTICS DESCRIPTION SYMBOL TEST CONDITION Collector Base Capacitance Current Gain -High Frequency Ccb | hfe |.