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2N4261 - SWITCHING TRANSISTOR

Download the 2N4261 datasheet PDF. This datasheet also covers the 2N4260 variant, as both devices belong to the same switching transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N4260-Motorola.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N4260 2N4261 2N4261 JAN, JTX AVAILABLE CASE 20, STYLE 10 TO-72 SWITCHING TRANSISTOR PNP SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Total Device Dissipation (a TA = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol vCEO vCBO v EBO "C PD TJ' Tst g Value 15 15 4.5 30 200 1.14 -65 to +200 Unit Vdc Vdc Vdc mAdc mW mW/°C °C ELECTRICAL CHARACTERISTICS (TA 25°C unless otherwise noted. OFF CHARACTERISTICS Characteristic Collector-Emitter Breakdown Voltage dC = 10 mAdc, Ie = 0) Collector-Base Breakdown Voltage (IC = 10 ,uAdc, Ie = 0) Emitter-Base Breakdown Voltage (IE = 10 ,uAdc, lc = 0) Collector Cutoff Current (VCE = 10 Vdc, V B E(off) = 2.
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