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2N6045 - COMPLEMENTARY SILICON POWER TRANSISTORS

Download the 2N6045 datasheet PDF. This datasheet also covers the 2N6040 variant, as both devices belong to the same complementary silicon power transistors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N6040_Motorola.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
2N6040 COMPLEMENTARY SILICON POWER TRANSISTORS
2N6042 COMPLEMENTARY SILICON POWER TRANSISTORS
2N6043 COMPLEMENTARY SILICON POWER TRANSISTORS
2N6030 Power Transistor
2N6031 Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6040/D Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc — VCEO(sus) = 60 Vdc (Min) — 2N6040, 2N6043 VCEO(sus) = 80 Vdc (Min) — 2N6041, 2N6044 VCEO(sus) = 100 Vdc (Min) — 2N6042, 2N6045 • Low Collector–Emitter Saturation Voltage — VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc — 2N6040,41, 2N6043,44 VCE(sat) = 2.0 Vdc (Max) @ IC = 3.
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