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MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Total Device Dissipation (a T"a = 25°C Derate above 25°C
@Total Device Dissipation Tq = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Symbol VCEO v CBO VEBO
ic
PD
2N6430 2N6431 200 300 200 300
6.0 50 500 2.86
PD TJ' Tstg
1.8 10.3
-65 to +200
Unit
Vdc
Vdc
Vdc
mA
mW
mW/°C
Watts mW/°C
°c
2N6430 2N6431
CASE 22, STYLE 1
TO-18 (TO-206AA)
GENERAL PURPOSE TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltaged) (IC = 1.0 mAdc, Ib = 0)
2N6430 2N6431
Collector-Base Breakdown Voltage dC = 0.
2N6430 Datasheet
