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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BAW56LT1/D
Monolithic Dual Switching Diode Common Anode
ANODE 3 CATHODE 1 2 CATHODE
BAW56LT1
Motorola Preferred Device
3 1
MAXIMUM RATINGS (EACH DIODE)
Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Value 70 200 500 Unit Vdc mAdc mAdc
2
CASE 318 – 08, STYLE 12 SOT– 23 (TO – 236AB)
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.
BAW56LT1 Datasheet
