MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
@Total Device Dissipation Ta = 25°C
Derate above 25°C
@Total Device Dissipation Tc = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
VCEO
VCBO
VEBO
ic
PD
pd
Tj.T stg
Symbol
R0JC
Rejc
Value
20
30
5.0
100
350
2.8
1.0
8.0
-55 to +150
Max
125
357,
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watt
mW/°C
°C
Unit
°C/W
°c/w
BF494
BF495
CASE 29-02, STYLE 1
TO-92 (TO-226AA)
SILICON
Refer to BF254 for graphs.
ELECTRICAL CHARACTERISTICS (Ta = 25 °C unless otherwise noted)
Characteristic
Symbol
Min.
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC = 1-0 mAdc, Ib = 0)
V(BR)CEO
20
Collector-Base Breakdown Voltage
dC = 10 uAdc, Ie = 0)
V(BR)CBO
30
Emitter-Base Breakdown Voltage
dE = 10 nAdc, Ic = 0)
V(BR)EBO
5.0
Collector Cutoff Current
(Vcb = 10 Vdc, l£ = 0)
ICBO
Emitter Cutoff Current
(Veb = 3.0 Vdc, Ic = 0)
ON CHARACTERISTICS
lEBO
DC Current Gain
dC = 1-0 mA, Vce = 10 Vdc)
BF494
BF494A
BF494B
BF495
BF495A
BF495B
hFE
65
65
125
35
35
65
Base-Emitter On Voltage
dC = 1 mAdc, Vce = 1 Vdc)
SMALL-SIGNAL CHARACTERISTICS
VBE(on)
Current Gain-Bandwidth Product
dC = 1 mAdc, Vce = 1 Vdc, f = 1 00 MHz)
Common Emitter Feedback Capacitance
(VcB = 1 Vdc, Ie = 0, f = 1 .0 MHz)
fT
150
C re
Noise Figure
Nf
dC = 1 -0 mAdc. Vce = 1 Vdc, f = 1 MHz, Rs = 50 ohms)
TYPICAL ADMITTANCE PARAMETERS (Ic = 1 .0 mAdc, Vce = 10 Vdc, frequency as stated)
Symbol
f= 450 KHz
BF494
BF495
f = 10.7 MHz
BF494
BF495
91 1e
bile
0.20
0.05
0.40
0.06
0.26
1.2
0.5
1.6
922e
b22e
D12e
912e
921e
b21e
3.0
8.0
- 5.0
- 0.7
30
- 0.003
1.5
8.0
- 5.0
- 0.4
30
- 0.004
5.3
190
- 130
- 3.0
30
- 0.7
4.5
190
- 130
- 3.5
30
- 1.0
Typ.
0.90
1.7
Max.
100
100
Unit
Vdc
Vdc
Vdc
nAdc
nAdc
220
125
220
125
75
125
0.74
Vdc
MHz
PF
dB
Unit
mmhos
mmhos
^mhos
nmhos
limhos
l^mhos
mmhos
mmhos
2-169
