The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
BFS17,S
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
RF TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage
Symbol vCEO vCBO
THERMAL CHARACTERISTICS
Characteristic
•Total Device Dissipation, T/ = 25°C Derate above 25°C
Symbol PD
Storage Temperature
Tstg
Thermal Resistance Junction to Ambient
R 0JA
mm•Package mounted on 99.5% alumina 10 x 8 x 0.6
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
OFF CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown Voltage OC = 10 mA)
Collector-Base Breakdown Voltage OC = 100 ^A)
Collector Cutoff Current
(VC E = 10 V)
Collector Cutoff Current
(VC B = 15 V)
Emitter Cutoff Current
(VEB = 1.0 V)
ON CHARACTERISTICS
DC Current Gain
dC = 2.0 mA, VCE = 1.0 V) dC = 2.0 mA, VC e = 1.
BFS17 Datasheet
