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BFS17 - Silicon NPN Planar RF Transistor

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Features

  • D High power gain D SMD-package 1 BFS17/BFS17R 1 23 94 9280 BFS17 Marking: E1 Plastic case (SOT 23) 1= Collector; 2= Base; 3= Emitter Absolute Maximum Ratings Parameters Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Tamb ≤ 60°C Storage temperature range Maximum Thermal Resistance Parameters Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 mm Cu 32 95 10527 BFS17R Ma.

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Datasheet Details

Part number BFS17
Manufacturer TEMIC
File Size 83.85 KB
Description Silicon NPN Planar RF Transistor
Datasheet download datasheet BFS17 Datasheet
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Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 BFS17/BFS17R 1 23 94 9280 BFS17 Marking: E1 Plastic case (SOT 23) 1= Collector; 2= Base; 3= Emitter Absolute Maximum Ratings Parameters Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Tamb ≤ 60°C Storage temperature range Maximum Thermal Resistance Parameters Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 mm Cu 32 95 10527 BFS17R Marking: E4 Plastic case (SOT 23) 1= Collector; 2= Base; 3= Emitter Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 25 15 2.
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