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BFS17S - RF TRANSISTOR

Download the BFS17S datasheet PDF. This datasheet also covers the BFS17 variant, as both devices belong to the same rf transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (BFS17-Motorola.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
BFS17 RF TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BFS17,S CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) RF TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Symbol vCEO vCBO THERMAL CHARACTERISTICS Characteristic •Total Device Dissipation, T/ = 25°C Derate above 25°C Symbol PD Storage Temperature Tstg Thermal Resistance Junction to Ambient R 0JA mm•Package mounted on 99.5% alumina 10 x 8 x 0.6 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) OFF CHARACTERISTICS Characteristic Collector-Emitter Breakdown Voltage OC = 10 mA) Collector-Base Breakdown Voltage OC = 100 ^A) Collector Cutoff Current (VC E = 10 V) Collector Cutoff Current (VC B = 15 V) Emitter Cutoff Current (VEB = 1.0 V) ON CHARACTERISTICS DC Current Gain dC = 2.0 mA, VCE = 1.0 V) dC = 2.0 mA, VC e = 1.